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| Ordering number : ENA0456 SBR100-16JS SANYO Semiconductors DATA SHEET SBR100-16JS Applications * Schottky Barrier Diode (Twin Type * Cathode Common) 160V, 10A Rectifier High frequency rectification (switching regulators, converters, choppers). Features * * * * * * Tj=150C. Low forward voltage (VF max=0.80V). Short reverse recovery time. Low switching noise. High reliability due to planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=110C 50Hz sine wave, 1 cycle Conditions Ratings 160 165 10 100 --55 to +150 --55 to +150 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=2mA, Tj=25C* IF=5A, Tj=25C* VR=160V, Tj=25C* VR=10V, Tj=25C* Junction-Case : Smoothed DC Ratings min 160 0.77 5 94 4.0 0.80 100 typ max Unit V V A pF C / W Note) * : Value per element Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91306SD MS IM TC-00000158 No. A0456-1/3 SBR100-16JS Package Dimensions unit : mm (typ) 7525-001 Electrical Connection Anode Anode 10.0 3.5 3.2 4.5 2.8 7.2 Cathode 16.0 3.6 1.6 1.2 14.0 0.75 123 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 3 2 10 IF -- VF 5 3 2 IR -- VR Tj=15 p 0C ty typ 7 typ 5 3 2 1.0 7 5 3 2 0.1 0 0.2 0.4 Reverse Current, IR -- mA Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 50 C Tj= 1 25 C ty p 125C typ 100C 75C ty p 0.6 0.8 1.0 1.2 IT11246 0 20 40 60 80 100 120 140 160 180 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 14 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 3.0 IT11247 PR(AV) -- VRM Sine wave 12 180 10 360 (3) (2) (1) (4) 2.5 (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave VR (1) (2) Rectangular wave 8 6 360 2.0 (3) 1.5 360 1.0 Sine wave VR 180 4 2 0 0 2 4 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 6 8 10 12 14 IT11248 (4) 0.5 360 0 0 20 40 60 80 100 120 140 160 180 Average Output Current, IO -- A Peak Reverse Voltage, VRM -- V IT11249 No. A0456-2/3 SBR100-16JS 170 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 5 C -- VR f=100kHz 150 3 2 Case Temperature, Tc -- C 130 110 Rectangular wave 360 100 7 5 90 70 Sine wave 360 4 6 (1) (2) (4) (3) 50 30 0 180 2 3 2 1.0 8 10 12 14 IT11250 2 3 5 7 10 2 3 5 Average Output Current, IO -- A 120 Transient Thermal Resistance, Rth(j-c) -- C / W IFSM -- t IS Reverse Voltage, VR -- V 10 7 5 7 100 IT11251 Rth(j-c) -- t Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 100 80 20ms t 3 2 60 1.0 7 5 40 20 3 2 0.001 2 3 5 70.01 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID01041 Time, t -- s ID01058 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0456-3/3 |
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